| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth device for suppressing reverse flow of a gas and improving the uniformity of film thickness distribution of an epitaxial film formed on the surface of a wafer. SOLUTION: The epitaxial growth device 1 includes: a chamber 10 equipped with a gas flow path 2 in the inside and a susceptor 13 for holding the wafer W and provided in the gas flow path 2; and a plurality of gas supply holes 22 disposed on an upstream side of the gas flow path 2 and juxtaposed in a direction across the gas flow path 2. In the device, the position of the gas supply holes 22 which is a height direction of a normal line of the wafer W is set for each of the gas supply holes 22. COPYRIGHT: (C)2011,JPO&INPIT
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