| 摘要 |
<p>The invention relates to a basic device for an image sensor, including a photodiode consisting of a doped area having a first type of conductivity (32) and formed at the surface of a semiconductor substrate having a second type of conductivity (30), adapted to be biased at a first reference voltage (Vref1), wherein the photodiode is combined with a device for the transfer (36), multiplication (38, 40, 42) and insulation (44) of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity (34) and adapted to be biased at a second reference voltage (Vref2).</p> |
