NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATURE

摘要

In embodiments of the invention, a method of forming a monolithic three-dimensional memory array is provided, the method including forming a first memory level that includes a plurality of memory cells, each memory cell comprising a plurality of conductors comprising aluminum or copper, and forming a silicon diode in each memory cell, wherein the silicon diode is formed at temperatures compatible with the conductors. The silicon diode may be formed using a hot wire chemical vapor deposition technique, for example. Other aspects are also described.