| 摘要 |
<p>A surface wave plasma CVD apparatus is provided with: a waveguide tube (3), which is connected to a microwave source (2) and has a plurality of slot antennas (S) formed therein; a dielectric plate (4) for introducing microwaves radiated from the slot antennas (S) to a plasma processing chamber (1) and generating surface wave plasma; a moving apparatus (6) which reciprocates a substrate-like subject (11) whereupon a film is to be formed such that the subject (11) passes through a film-forming process region facing the dielectric plate (4); and a controller (20) which controls reciprocation of the subject (11) performed by the moving apparatus (6), corresponding to film-forming conditions, and permits a film to be formed on the subject whereupon the film is to be formed.</p> |
