GROUP III NITRIDE SEMICONDUCTOR LAYER LAMINATED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor layer laminated substrate with which a semiconductor device having high extraction efficiency of light is obtained and a method of manufacturing the same, and a group III nitride semiconductor device.

SOLUTION: The group III nitride semiconductor layer laminated substrate 1 is obtained by sticking together a group III nitride semiconductor layer 20a and a base substrate 10 whose chemical composition is different from that of the group III nitride semiconductor layer 20a. The group III nitride semiconductor layer 20a includes a photonic crystal structure layer 20p having a principal surface 20n joined to the base substrate 10 and periodically varying in refractive index in two dimensions parallel to the principal surface 20n.

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