| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of reducing the on-resistance, and to provide a method of manufacturing the device. <P>SOLUTION: A first compound semiconductor layer 13b whose surface is a (0001) surface and a second compound semiconductor layer 13a whose surface is a (000-1) surface are formed so as to contact with each other above a substrate, a third compound semiconductor layer 14b whose lattice constant is smaller than that of the first compound semiconductor layer 13b is formed on the first compound semiconductor layer 13b, and a fourth compound semiconductor layer 14a, whose lattice constant is smaller than that of the second compound semiconductor layer 13a is formed on the second compound semiconductor layer 13a. Also, a first electrode for imparting potential to the first compound semiconductor layer and a second electrode for imparting potential to the second compound semiconductor layer are formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
