SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME

摘要

A semiconductor device (150) is provided with a first semiconductor region (101) of a first conductivity type including Ge, a gate electrode (122) formed on the first semiconductor region (101) with a gate insulating film (121) interposed between, diffusion regions (107) of a second conductivity type formed at portions of the first semiconductor region (101) that are to the two lateral sides of the gate electrode (122), and second semiconductor regions (108) of a first conductivity type formed between the first semiconductor region (101) and diffusion regions (107). The second semiconductor region (108) contains a concentration of Si higher than the channel forming region at the portion of the first semiconductor region (101) below the gate electrode (122).