TECHNIQUES FOR FORMING THIN FILMS BY IMPLANTATION WITH REDUCED CHANNELING

摘要

The present invention relates to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by multiple techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging beam In another technique, the substrate is tilted at an angle relative to the impinging beam. In another technique, the substrate is subjected to a dithepng motion dunng the implantation. These techniques may be employed alone or in combination