SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a chemical compound semiconductor substrate suited for formation of multiple different types of devices such as HBTs and FETs on a single semiconductor substrate.

SOLUTION: The semiconductor substrate is provided with: a first semiconductor 110; a carrier trap layer 130 that is formed on top of the first semiconductor and has electron capture centers or hole capture centers; a second semiconductor 144 that is epitaxially grown on top of the carrier trap layer and functions as a channel for free electrons or free holes to move in; and a third semiconductor 160 that includes either an N-P-N or P-N-P layered semiconductor structure epitaxially grown on top of the second semiconductor.

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