| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic detector which reduces sensitivity dispersion between products and improve long-term reliability without sacrificing sensitivity. SOLUTION: In a p-type element forming region 3a on a portion of a p-type silicon layer 3 as a semiconductor layer, a p-type well region 8 and an n-type collector region 6 are formed separately from each other and an n-type emitter region 5 is formed on the surface side of the well region 8. A recombination region 7 is composed of an n-type impurity diffusion region acting as a recombination center of minority carriers in a base region 4. The recombination region is formed on the surface sides of the well region 8 and the base region 4 composed of a portion between the well region 8 and the collector region 6 of the element forming region 3a. An insulation film 12 is formed on the surface side of the p-type silicon layer 3. The recombination region 7 is formed of a polycrystalline semiconductor film with a different conduction type from that of the base region 4, so that a potential difference is formed between the recombination region 7 and the base region 4. COPYRIGHT: (C)2011,JPO&INPIT
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