发明名称 |
SEMICONDUCTOR MEMORY DEVICE REWRITING DATA AFTER EXECUTION OF MULTIPLE READ OPERATIONS |
摘要 |
Provided is a semiconductor memory device including a memory cell; a writing driver providing a program current to the memory cell to write data in the memory cell; a sense amplifier processing a read operation reading data written in the memory cell; and a controller providing a rewriting signal for rewriting data read from the sense amplifier in the memory cell to the writing driver after the sense amplifier repeatedly applies a read operation more than a predetermined number of times.
|
申请公布号 |
US2010290278(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20100775744 |
申请日期 |
2010.05.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DOO GON |
分类号 |
G11C11/00;G11C7/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|