发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
Oxidation of a metal film disposed under a high permittivity insulation film can be suppressed, and the productivity of a film-forming process can be improved. In a method of manufacturing a semiconductor device, a first high permittivity insulation film is formed on a substrate by alternately repeating a process of supplying a source into a processing chamber in which the substrate is accommodated and exhausting the source and a process of supplying a first oxidizing source into the processing chamber and exhausting the first oxidizing source; and a second high permittivity insulation film is formed on the first high permittivity insulation film by alternately repeating a process of supplying the source into the processing chamber and exhausting the source and a process of supplying a second oxidizing source different from the first oxidizing source into the processing chamber and exhausting the second oxidizing source.
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申请公布号 |
US2010291763(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20100781488 |
申请日期 |
2010.05.17 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
OGAWA ARITO;HORII SADAYOSHI;ITATANI HIDEHARU |
分类号 |
H01L21/3205;B05C11/10;H01L21/31 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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