发明名称 Hydrogen Sensor
摘要 A hydrogen sensor includes a thin film layer formed over a substrate of resin or the like, and a catalyst layer formed on a surface of the thin film layer. When contacted by leaked hydrogen gas, the catalyst layer quickly hydrogenates the thin film layer through its catalytic action, thereby causing a change in optical reflectance of the thin film layer. The hydrogen sensor includes a protective film formed at least either between the substrate and the thin film layer or on a surface of the catalyst layer.
申请公布号 US2010290050(A1) 申请公布日期 2010.11.18
申请号 US20070225320 申请日期 2007.02.23
申请人 KABUSHIKI KAISHA ATSUMITEC 发明人 UCHIYAMA NAOKI
分类号 G01N21/55 主分类号 G01N21/55
代理机构 代理人
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