| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for a transistor element capable of manufacturing an epitaxial wafer for a transistor element having an excellent electric characteristic without degrading mobility of an epitaxial layer for an HEMT. SOLUTION: In this method of manufacturing an epitaxial wafer 1 for a transistor element, an epitaxial layer 3 for a high-electron-mobility transistor is formed on a substrate 2, and an epitaxial layer 4 for a hetero bipolar transistor is formed on the epitaxial layer 3 for a high-electron-mobility transistor. In the method, the epitaxial layer 3 for a high-electron-mobility transistor is grown at a growth temperature of 600-750°C and at a V/III ratio of 10-150, and the epitaxial layer 4 for a hetero bipolar transistor is grown at low temperature relative to the growth temperature of the epitaxial layer 3 for a high-electron-mobility transistor. COPYRIGHT: (C)2011,JPO&INPIT |
