| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of providing a group III nitride semiconductor layer suitably usable for forming a light emitting device superior in the efficiency of internal quantum and the efficiency of light extraction, and superior in crystallinity. <P>SOLUTION: This method of manufacturing a group III nitride semiconductor layer 103 for forming a single crystal group III nitride semiconductor layer 103 on a substrate 101 formed of sapphire includes: a substrate processing process of forming, on the substrate 101, an upper surface 10 comprising a flat surface 11 comprising a (0001) C-plane and a plurality of protrusions 12 each having a crystal surface exposed to a slope constituting a side by performing dry etching by forming a mask on the (0001) C-plane of the substrate 101 and performing wet etching; a buffer layer formation process of laminating a buffer layer formed of Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) on the upper surface 10; and an epitaxial process of epitaxially growing the group III nitride semiconductor layer 103 on the upper surface 10 by an MOCVD method, thereby embedding the protrusions 12 in the group III nitride semiconductor layer 103. <P>COPYRIGHT: (C)2011,JPO&INPIT |
