发明名称 SEMICONDUCTOR DEVICE HAVING ELECTRIC FUSE MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electric fuse memory of which area occupied by a constitution for voltage supply is small, and which performs highly precise voltage supply. <P>SOLUTION: The electric fuse memory includes a memory cell MC including a fuse element F and a first transistor TRB, an external terminal PAD, and a second transistor TRA. An N-type first transistor and the fuse element F are mutually connected in series. The external terminal PAD is a terminal which supplies external voltage VFUSE to one terminal side of the fuse element F. The second transistor TRA is an N-type transistor which supplies an internal voltage GND to the other terminal side of the fuse element F. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010262711(A) 申请公布日期 2010.11.18
申请号 JP20090114179 申请日期 2009.05.11
申请人 SONY CORP 发明人 TORIGE YUJI
分类号 G11C17/14;G11C17/18;H01L21/822;H01L27/04;H01L27/10 主分类号 G11C17/14
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