发明名称 Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer
摘要 <p>In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.</p>
申请公布号 WO2010131079(A1) 申请公布日期 2010.11.18
申请号 WO2009IB52041 申请日期 2009.05.15
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG;CHU, TSUI PING;YOOK, HYUNG SUN;SIM, POH CHING 发明人 CHU, TSUI PING;YOOK, HYUNG SUN;SIM, POH CHING
分类号 H01L27/04;H01L21/3205 主分类号 H01L27/04
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