SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory cell includes a plurality of memory cells configured to store data having polarity corresponding to a direction of current flowing in first and second driving lines, a current generator configured to generate a predetermined read current, apply the predetermined read current to the plurality of memory cells, and generate a data current corresponding variation of the read current according to the data and a current controller connected to a current path of the read current and configured to control a current amount of the read current.