| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas generating material the structure of which is simple, which has such a constitution/structure that problems such as corrosion are hardly caused and from which hydrogen gas and oxygen gas can be efficiently generated. SOLUTION: The gas generating material 120 is obtained by layering a first semiconductor material layer 21 containing p-type impurities and a second semiconductor material layer 22 containing n-type impurities on each other. A valence band in the first semiconductor material layer 21 and a conduction band in the second semiconductor material layer 22 have an energetically-coincident heterojunction to generate different gasses from the respective surfaces of the first and second semiconductor material layers 21 and 22. COPYRIGHT: (C)2011,JPO&INPIT
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