| 摘要 |
PROBLEM TO BE SOLVED: To improve productivity and performance of a CMISFET including a high-dielectric-constant gate insulating film and a metal gate electrode. SOLUTION: An Hf-containing insulating film 5 for a gate insulating film is formed on the main surface of a semiconductor substrate 1. A metal nitride film 7 is formed on the insulating film. The metal nitride film 7 in an nMIS formation region 1A where an n-channel MISFET is to be formed is selectively removed by wet etching using a photoresist pattern on the metal nitride film 7 as a mask. Then, a threshold adjustment film 8 containing a rare-earth element is formed. The Hf-containing insulating film 5 in the nMIS formation region 1A reacts with the threshold adjustment film 8 by heat treatment. However, the Hf-containing insulating film 5 in a pMIS formation region 1B where a p-channel MISFET is to be formed does not react with the threshold adjustment film 8 because of the presence of the metal nitride film 7. Subsequently, after removing the unreacted threshold adjustment film 8 and the metal nitride film 7, each metal gate electrode is formed in the nMIS formation region 1A and the pMIS formation region 1B respectively. COPYRIGHT: (C)2011,JPO&INPIT
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