发明名称 |
HIGH-VOLTAGE SOI MOS DEVICE STRUCTURE AND METHOD OF FABRICATION |
摘要 |
Structures and methods for integrating a thick oxide high-voltage metal-oxide-semiconductor (MOS) device into a thin oxide silicon-on-insulator (SOI). A method of forming a semiconductor structure includes forming first source and drain regions of a first device below a buried oxide layer of a silicon-on-insulator (SOI) wafer, forming a gate of the first device in a layer of semiconductor material above the buried oxide layer; and forming second source and drain regions of a second device in the layer of semiconductor material above the buried oxide layer.
|
申请公布号 |
US2010289079(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20090465857 |
申请日期 |
2009.05.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;RANKIN JED H.;SHI YUN;TONTI WILLIAM R.;ABADEER WAGDI W.;KAMAL LILIAN |
分类号 |
H01L27/12;H01L21/8234 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|