发明名称 |
LATERAL BIPOLAR JUNCTION TRANSISTOR |
摘要 |
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.
|
申请公布号 |
US2010289058(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20090464107 |
申请日期 |
2009.05.12 |
申请人 |
YANG MING-TZONG;KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG |
发明人 |
YANG MING-TZONG;KO CHING-CHUNG;LEE TUNG-HSING;ZENG ZHENG |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|