发明名称 |
III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
|
申请公布号 |
US2010289036(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20080811247 |
申请日期 |
2008.12.31 |
申请人 |
EPIVALLEY CO., LTD. |
发明人 |
KIM CHANG TAE;LEE TAE HEE |
分类号 |
H01L33/02;H01L33/00;H01L33/20;H01L33/30;H01L33/32 |
主分类号 |
H01L33/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|