发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY PANEL COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要 A TFT (5) includes: a gate electrode (12a); a first semiconductor portion (14a) that overlaps the gate electrode (12a) having the gate insulating film (13) interposed therebetween; a source electrode (15a) and a drain electrode (15b) that overlap the gate electrode (12a) having the gate insulating film (13) and the first semiconductor portion (14a) interposed therebetween; a second semiconductor portion (14b) that overlaps the gate electrode (12a) between the gate insulating film (13) and the source electrode (15a); and a conductive portion (15c) that overlaps the gate electrode (12a) having the gate insulating film (13) and the second semiconductor portion (14b) interposed therebetween. The TFT (5) brings the source line (15a) and the pixel electrode (17) into conduction by a switching element that includes short-circuit portion at the source electrode (15a) and the drain electrode (15b), the second semiconductor portion (14b) and the conductive portion (15c).
申请公布号 US2010289025(A1) 申请公布日期 2010.11.18
申请号 US20080747455 申请日期 2008.08.05
申请人 SHARP KABUSHIKI KAISHA 发明人 NAKAGAWA HIDETOSHI
分类号 H01L33/00;H01L21/84;H01L27/12;H01L29/786 主分类号 H01L33/00
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