发明名称 POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER COMPOUND, AND COMPOUND
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition from which a resist pattern having excellent sensitivity, high resolution and good features can be formed, to provide a polymer compound that can be used as a base material of the positive resist composition, to provide a compound that can be used for synthesizing a structural unit of the polymer compound, and to provide a method for forming a resist pattern. <P>SOLUTION: The positive resist composition contains a base component (A) the solubility of which with an alkali developing solution increases by an action of an acid, and an acid generator component (B) generating an acid by exposure. The base component (A) contains a polymer compound (A1) having a structural unit (a0) including an acid-dissociable dissolution inhibiting group, further, the acid-dissociable dissolution inhibiting group in the structural unit (a0) contains a group expressed by general formula (a0-0-1). In general formula (a0-0-1), R<SP>1'</SP>and R<SP>2'</SP>each independently represent a hydrogen atom or a 1-5C alkyl group; Y<SP>1</SP>represents a single bond or a divalent linking group; a represents an integer of 0 to 2; R<SP>6'</SP>represents an alkyl group, alkoxy group, halogenated alkyl group, hydroxyl group, -COOR", -OC(=O)R", hydroxyalkyl group or cyano group; R" represents a hydrogen atom or an alkyl group; and X represents an oxygen atom. When the R<SP>6'</SP>is -COOR", X represents an oxygen atom or a 1-3C alkylene group. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010262241(A) 申请公布日期 2010.11.18
申请号 JP20090114892 申请日期 2009.05.11
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KOMURO YOSHITAKA;UTSUMI YOSHIYUKI;HANEDA HIDEO
分类号 G03F7/039;C08F212/14;G03F7/004;H01L21/027 主分类号 G03F7/039
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