LOW-CAPACITANCE PHOTODIODE ELEMENT, AND COMPUTED TOMOGRAPHY DETECTOR

摘要

PROBLEM TO BE SOLVED: To develop a further-low-capacitance photodiode element without impairing a response time of each photodiode element in order to reduce electronic noise, and to develop a further-low-capacitance photodiode array.

SOLUTION: This photodiode element (20) includes a first layer having a first diffusion type, and a second layer. The second layer defines a charge-collecting area (29). The charge-collecting area (29) includes an active region (32) of a second diffusion type and an inactive region (33). The active region (32)surrounds the inactive region (33). The photodiode element (20) also includes an intrinsic semiconductor layer between the first layer and the second layer.

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