| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a metal gate having high work function and high-temperature stability, and a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a p-type field effect transistor that includes a gate dielectric layer 108 formed on a semiconductor substrate, an oxygen-containing alloy layer 110 formed on the gate dielectric layer 108, a Re layer 112 formed on the oxygen-containing alloy layer 110, and a Re oxide layer 502 located between the gate dielectric layer 108 and the oxygen-containing alloy layer 110. COPYRIGHT: (C)2011,JPO&INPIT
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