| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves both reducuction of resistance of an IGBT and recovery characteristics of an FWD. SOLUTION: The semiconductor device includes the IGBT formed in a first region in a semiconductor layer, including a first trench region, a first gate formed in the first trench region, and an emitter and a collector arranged apart from each other along the thickness of the semiconductor layer, and controlling a current flowing along the thickness of the semiconductor layer by controlling the potential of the first gate; and the FWD formed in a second region adjacent to the first region in the semiconductor layer, including a second trench region, a second gate formed in the second trench region, a base and a collector arranged apart from each other along the thickness of the semiconductor layer, a crystal defect region or lifetime control region formed at a bottom of the second trench and having its potential controlled by the second gate. When the FWD is off, the potential of the second gate is controlled to gather residual carriers in the semiconductor layer to the crystal defect region or lifetime control region. COPYRIGHT: (C)2011,JPO&INPIT
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