| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device including a bump electrode by preventing occurrence of a gap between the bump electrode and an insulation film. SOLUTION: This semiconductor device includes: a wiring electrode 1 formed on a semiconductor substrate; the insulation film 2 formed on the wiring electrode 1 and including an opening for exposing the wiring electrode 1; the bump electrode 3 formed on the wiring electrode 1 exposed from the opening of the insulation film 2; and a filling material 5 arranged between the insulation film 2 and the bump electrode 3. COPYRIGHT: (C)2011,JPO&INPIT
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