| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction electrode structure for forming an electrode using copper alloy having a good pattern processability and that reduces material cost and manufacturing cost, and of assuring good ohmic contact characteristics between the electrode and a semiconductor layer, and to provide a method of manufacturing the same and a target material. SOLUTION: In a junction electrode structure 10, an electrode 2 consisting of a copper (Cu) alloy is provided on a semiconductor layer 1 consisting of an amorphous silicon (a-Si). At an interface between the semiconductor layer 1 and the electrode 2, an ohmic contact layer 3 consisting of a thermal diffusion region of the semiconductor layer 1 itself and the electrode 2 itself in the vicinity of the interface is provided. COPYRIGHT: (C)2011,JPO&INPIT |
