| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which surely operates by improving an insulation property between a gate electrode and a source electrode to reduce leak current between the gate electrode and the source electrode, and to provide an image display unit. SOLUTION: By forming this thin film transistor including a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second openings which are separately formed directly on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening of the protective film, the film thickness of the insulating film between the gate electrode and the source electrode is substantially increased, and the insulating property can be improved. COPYRIGHT: (C)2011,JPO&INPIT |
