| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable process by restraining discharge of those other than the process and eliminating power losses and abnormal discharges, and to provide a dry etching apparatus for improving an etching rate. SOLUTION: In the dry etching apparatus, a shower plate 15 for diffusing process gas from process gas introduction systems 17, 18, 19 is provided at a top-board-side position of a vacuum treatment chamber 11 that opposes a substrate electrode 13 attached to a substrate 12 to be etched while being provided in the vacuum treatment chamber 11, and a perforated discharge prevention plate 16 is provided at space between the top board 11a of the vacuum treatment chamber 11 and the shower plate 15. COPYRIGHT: (C)2011,JPO&INPIT
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