| 发明名称 |
SILICON NITRIDE DIFFUSION BARRIER LAYER FOR CADMIUM STANNATE TCO |
| 摘要 |
A photovoltaic device can include a transparent conductive oxide layer adjacent to a substrate and a barrier layer, which can include a silicon-containing material.
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| 申请公布号 |
US2010288355(A1) |
申请公布日期 |
2010.11.18 |
| 申请号 |
US20100782546 |
申请日期 |
2010.05.18 |
| 申请人 |
FIRST SOLAR, INC. |
发明人 |
MILLS SCOTT;ROBERTS DALE;ZHAO ZHIBO;YANG YU |
| 分类号 |
H01L31/0224;H01L21/283;H01L29/43;H01L31/18 |
主分类号 |
H01L31/0224 |
| 代理机构 |
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