SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

A silicon carbide substrate (1) with which manufacturing cost of a semiconductor device using the silicon carbide substrate can be reduced is provided with: a base substrate (10) composed of a silicon carbide; and a SiC layer (20), which is composed of single crystal silicon carbide other than the silicon carbide of the base substrate (10) and is disposed on the base substrate (10) in contact with the base substrate. Thus, in the silicon carbide substrate (1), the silicon carbide single crystal can be effectively used.