| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the deterioration of the operation of a semiconductor device due to the etching damage of the high dielectric layer by forming a protection layer with a thickness to stop the etching of the upper layer on the high dielectric layer. CONSTITUTION: A tunneling layer(120) is formed on a semiconductor substrate(100). A charge trap layer(130) is formed on the tunneling layer. A blocking layer(140) is formed on the charge trapping layer. A protection layer(150) is formed on the blocking layer. A barrier layer(160) is formed on the protection layer. A control gate(170) is formed on the barrier layer.</p> |
