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发明名称
Method for preparing non-polar single crystalline A-plane nitride semiconductor wafer
摘要
申请公布号
EP1593760(B1)
申请公布日期
2010.11.17
申请号
EP20050009819
申请日期
2005.05.04
申请人
SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
发明人
SHIN, HYUN-MIN;LEE, HAE-YONG;LEE, CHANGHO;KIM, HYUN-SUK;KIM, CHONG-DON;KONG, SUN-HWAN
分类号
C30B29/38;C30B29/40;C23C16/34;C30B25/02;C30B25/18;H01L21/205
主分类号
C30B29/38
代理机构
代理人
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