发明名称 APPARATUS AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM
摘要 PURPOSE: An apparatus and a method for manufacturing polycrystalline silicon thin film are provided to reduce the process cost by reducing the number of replacing and improving the manufacturing yield. CONSTITUTION: A substrate(40) comprises a base substrate(41), an amorphous silicon thin film(43), and a conductive film(45). The substrate is settled on a supporting part(10). A first conductor(21) and a second conductor(23) are parallelly installed with the applied current direction. A power supply unit(30) supplies the power.
申请公布号 KR20100121202(A) 申请公布日期 2010.11.17
申请号 KR20090040251 申请日期 2009.05.08
申请人 ENSILTECH CORPORATION 发明人 RO, JAE SANG;HONG, WON EUI
分类号 H01L21/20 主分类号 H01L21/20
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