DRIVING METHOD FOR REVERSE CONDUCTING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FEEDING DEVICE

摘要

A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that enables to adjust an injection efficiency of holes or electrons to the diode element domain is provided. When a return current 110 flows in the reverse conducting semiconductor device 20 that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode 32 is applied to second trench gate electrodes 46 of the diode element domain 24. N-type inversion layers 56 are formed in the periphery of the second trench gate electrodes 46, and the electrons 58 flows therethrough via a first body contact region 35 and a drift region 38 which are of the same n-type. The injection efficiency of the electrons 58 to the return current 110 is increased, and the injection efficiency of the holes 54 is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.