METHOD FOR FABRICATING THIN FILM TRANSISTOR USING SELF-ASSEMBLY MONOLAYER
摘要
<p>PURPOSE: A manufacturing method of a thin film transistor is provided to easily manufacture a thin film transistor with low costs by forming a source/drain electrode by using a self-assembled monolayer without an additional mask process. CONSTITUTION: A gate is formed on a substrate(100). A gate insulating layer(110), which covers the gate, is formed in the top of the substrate. An oxide semiconductor active layer(120) is formed on the gate insulating layer. A hydrophobicity self-assembled monolayer(210) is formed on the oxide semiconductor active layer by irradiating a ultraviolet ray to the oxide semiconductor active layer. A source/drain electrode is formed on the oxide semiconductor active layer.</p>
申请公布号
KR20100120940(A)
申请公布日期
2010.11.17
申请号
KR20090039825
申请日期
2009.05.07
申请人
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
LEE, JAE GAB;CHOI, DUCK KYUN;KIM, HYUN HO;CHO, YOUNG JE