STRIP WITH REDUCED LOW-K DIELECTRIC DAMAGE

摘要

PURPOSE: A thin film which reduces the low permittivity dielectric damage is provided to obtain a structure on a semiconductor wafer by following exfoliation of mask by etching the features on the low permittivity dielectric layer. CONSTITUTION: A patterned organic mask is formed on a low permittivity dielectric layer(104). A substrate is located in a plasma processing chamber(106). The feature is etched through the photoresist mask on the layer of the low permittivity dielectric(108). The photoresist mask exfoliates(110).