METHOD OF OPERATING NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for operating a non-volatile memory device is provided to reduce the width of a threshold voltage distribution by regulating the level of a sensing current using the connection resistance value of an odd bit-line and a page buffer. CONSTITUTION: Whether even memory cells are programmed is verified in order to verify the program of odd memory-cells. Based on whether even memory cells are programmed, the connection resistance value of an odd bit-line and a page buffer is set. The odd memory cells are programmed. The odd bit-line and the page buffer are connected using the set connection resistance value.