| 摘要 |
PURPOSE: A non-volatile memory device is provided to rapidly eliminate a source-line bouncing phenomenon by preventing the voltage of a source-line from being raised using a one-way element and a negative pressure generating unit. CONSTITUTION: A memory cell array(100) comprises cell strings in connection between bit-lines and source-lines. A ground voltage maintenance unit(500) comprises an one-way element(200), a negative pressure generating unit(300), and a ground voltage supplying unit(400). The one-way element is in connection with the source-lines. The negative pressure generating unit is in connection with the one-way element in order to generate a negative voltage. The ground voltage supplying unit connects the source-lines to a ground terminal.
|
