| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition suitable for ArF excimer laser lithography, in particular, giving preferable line edge roughness and capable of giving finer patterns by a reflow step. <P>SOLUTION: The chemically amplified positive resist composition contains: a resin having one or more repeating units expressed by formulae (IV) and (V), a repeating unit expressed by formula (I), and a repeating unit expressed by formula (II); and an acid generator. In formulae, each of X, X<SP>1</SP>, X<SP>3</SP>, X<SP>4</SP>represents a hydrogen, an alkyl group or a perfluoroalkyl group; each of Z, Z<SP>1</SP>, Z<SP>3</SP>, Z<SP>4</SP>represents a bivalent hydrocarbon group; each of n<SP>1</SP>, n<SP>3</SP>, n<SP>4</SP>represents an integer 0 to 3; each of m, p, s represents an integer 0 to 2; R represents an alkyl group; R<SP>1</SP>represents an alkyl group or a cycloalkyl group; each of R<SP>2</SP>, R<SP>3</SP>represents a hydroxyl group or a hydroxymethyl group; R<SP>4</SP>represents an alkyl group or an alkoxy group; G represents -(CO)O- or -O-; and Y represents a plurality of atoms necessary to complete an alicyclic hydrocarbon group with the described carbon atoms. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
