PURPOSE: An apparatus for processing plasma is provided to constantly etch the surface of a substrate by maintaining the uniformity of plasma in a chamber. CONSTITUTION: A substrate is arranged in a chamber. A first electrode(104) is arranged in the chamber and is spaced apart from the lower side of the substrate. A second electrode(105) is arranged in the chamber and is spaced apart from the upper side of the substrate. A gap regulating unit(102) regulates a gap between the first electrode and the substrate or a gap between the second electrode and the substrate.
