发明名称 |
Programmable resistance memory element and method for making same |
摘要 |
A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.
|
申请公布号 |
US7833823(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20080069046 |
申请日期 |
2008.02.07 |
申请人 |
OVONYX, INC. |
发明人 |
KLERSY PATRICK |
分类号 |
H01L21/00;G11C11/56;H01L27/24;H01L45/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|