| 摘要 |
The present invention provides a method of making a Cu—In—Ga sputtering target by melting Cu, In and Ga, Cu and In or Cu and Ga to form a uniform melt with a pre-determined stoichiometry, which melt is sprayed to cause sprayed uniform melt particles to solidify into Cu—In—Ga particles with the pre-determined stoichiometry. The sputtering target is then made using the Cu—In—Ga particles. In a further aspect of the invention, there is provided a method of producing a thin film absorber layer for solar cell fabrication by sputter depositing a precursor film with a first composition
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