发明名称 |
Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers |
摘要 |
A method for plasma treatment of anisotropically etched openings to improve a crack initiation and propagation resistance including providing a semiconductor wafer having a process surface including anisotropically etched openings extending at least partially through a dielectric insulating layer; plasma treating in at least one plasma treatment the process surface including the anisotropically etched openings to improve an adhesion of a subsequently deposited refractory metal adhesion/barrier layer thereover; and, blanket depositing at least one refractory metal adhesion/barrier layer to line the anisotropically etched openings.
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申请公布号 |
USRE41935(E1) |
申请公布日期 |
2010.11.16 |
申请号 |
US20070655743 |
申请日期 |
2007.01.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
PAN SHING-CHYANG;LIN KENG-CHU;CHIOU WEN-CHIH;JENG SHWANG-MING |
分类号 |
H01L21/26;H01L21/30;H01L21/311;H01L21/324;H01L21/42;H01L21/4763;H01L21/477;H01L21/768 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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