发明名称 Capacitor and method for fabricating the same
摘要 A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
申请公布号 US7835134(B2) 申请公布日期 2010.11.16
申请号 US20090569769 申请日期 2009.09.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIL DEOK-SIN;SONG HAN-SANG;YEOM SEUNG-JIN;PARK KI-SEON;ROH JAE-SUNG
分类号 H01G4/06 主分类号 H01G4/06
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