发明名称 Method and apparatus for statistical CMOS device characterization
摘要 A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.
申请公布号 US7834649(B2) 申请公布日期 2010.11.16
申请号 US20100779038 申请日期 2010.05.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AGARWAL KANAK B.;HAYES JERRY D.;LIU YING
分类号 G01R31/26 主分类号 G01R31/26
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