发明名称 |
Integrated circuit system employing grain size enlargement |
摘要 |
An integrated circuit system that includes: providing a substrate including an active device with a gate top surface exposed; implanting a do pant within the gate to alter the grain size of the gate material; forming a dielectric layer over the active device and the substrate; and annealing the integrated circuit system to transfer the stress of the dielectric layer into the active device.
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申请公布号 |
US7833888(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20080116156 |
申请日期 |
2008.05.06 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
TAN CHUNG FOONG;LEE JAE GON;TEO LEE WEE;QUEK ELGIN KIOK BOONE |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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